EL SEGUNDO, Calif.--(EON: Enhanced Online News)--Efficient Power Conversion Corporation (www.epc-co.com) introduces the EPC2018 as the newest member of EPC’s family of enhancement mode gallium nitride power transistors.
“The EPC2018 is an excellent complement to our existing family of eGaN FETs. The low on resistance, low output capacitance, fast switching, and no reverse recovery reduce the switching losses in power conversion applications and allow for higher efficiency and improved sound quality in Class D audio applications”
The EPC2018 is a 5.76 mm2, 150 VDS, 12 A device with a maximum RDS(on) of 25 milliohms with 5 V applied to the gate. This GaN power transistor delivers high performance due to its ultra high switching frequency, extremely low RDS(on), exceptionally low QG and in a very small package.
Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2018 is much smaller and has many times superior switching performance. Applications that benefit from eGaN FET performance include high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, as well as many other circuits needing nanosecond switching speeds.
“The EPC2018 is an excellent complement to our existing family of eGaN FETs. The low on resistance, low output capacitance, fast switching, and no reverse recovery reduce the switching losses in power conversion applications and allow for higher efficiency and improved sound quality in Class D audio applications,” noted Alex Lidow, co-founder and CEO.
In 1k piece quantities, the EPC2018 is priced at $6.54 and is immediately available through Digi-Key Corporation.
Design Information and Support for eGaN FETs:
- EPC2018 Datasheet at http://epc-co.com/epc/Products/eGaNFETs/EPC2018.aspx
- eGaN FET Product Portfolio at http://epc-co.com/epc/Products/eGaNFETs.aspx
- Application Notes and White Papers available for download in the GaN Library at http://epc-co.com/epc/GaNLibrary.aspx
Table 1 – Summary of EPC2018 Specification Ratings
|Package (mm)||LGA 3.6 x 1.6|
|QG typ (nC)||5|
|QG max (nC)||7.5|
|QGS typ (nC)||1.3|
|QGS max (nC)||2|
|QGD typ (nC)||1.7|
|QGD max (nC)||2.6|
|QOSS typ (nC)||40|
|QOSS max (nC)||50|
|ID (A) Pulsed||60|
EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, solar micro inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. Visit our web site: www.epc-co.com.
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