Everspin Announces Sampling of the World’s First 1-Gigabit MRAM Product

1Gb DDR4 ST-MRAM will be showcased at the Flash Memory Summit in Santa Clara, CA, August 8-10

CHANDLER, Ariz.--()--Everspin Technologies, Inc. (NASDAQ: MRAM), has begun sampling its new 1-Gigabit Spin Torque Magnetoresistive Random Access Memory (ST-MRAM) with lead customers. This breakthrough product delivers a high-endurance, persistent memory with a DDR4- compatible interface. These features enable storage system vendors to enhance the reliability and performance of storage devices and systems by delivering protection against power loss without the use of supercapacitors or batteries. Enterprise SSD designers can take advantage of fast persistent memory that is inherently power fail-safe while also reducing write amplification and overprovisioning, common limitations for NAND Flash based SSDs.

“Getting our latest technology into customers’ hands so they can develop their products to take advantage of the unique capabilities of high-endurance, fast, persistent memory is a significant milestone for Everspin.”

Everspin will be demonstrating the EMD4E001G at the upcoming Flash Memory Summit in Santa Clara on August 7-10. This latest ST-MRAM product provides 4 times the capacity of Everspin’s current 256Mb DDR3 ST-MRAM and will be shown running in Everspin’s nvNITROTM storage accelerator products.

The 1 Gb MRAM is produced in 28nm CMOS on 300mm wafers in partnership with GLOBALFOUNDRIES, utilizing Everspin’s patented perpendicular magnetic tunnel junction (pMTJ) technology. The rapid development of the 1Gb part is a direct result of the high degree of scalability of the pMTJ, moving from 40nm to 28nm processes in less than one year through our close partnership with Global Foundries.

“We are very excited to begin sampling our 1 Gb product,” said Phill LoPresti, Everspin’s President and CEO. “Getting our latest technology into customers’ hands so they can develop their products to take advantage of the unique capabilities of high-endurance, fast, persistent memory is a significant milestone for Everspin.”

About Everspin Technologies

Everspin Technologies is the leading provider of Magnetoresistive RAM (MRAM) solutions. Everspin’s MRAM solutions enable the protection of mission critical data by combining the persistence of non-volatile memory with the speed and endurance of SRAM or DRAM. Everspin’s MRAM solutions allow its customers in the industrial, automotive, and enterprise storage markets to design high performance and reliable systems. Everspin is the only provider of commercially available MRAM solutions and has shipped over 70 million MRAM units. For more information, visit www.everspin.com.

Cautionary Statement Regarding Forward-Looking Statements

The statements in this press release regarding the development and production of Everspin’s MRAM solutions are forward-looking statements that are subject to risks and uncertainties. Risks that could cause these forward-looking statements not to come true include, but are not limited to: the risk that unexpected technical difficulties may develop in the final stages of development or production of these products; and that customers may not perceive the benefits of Everspin’s MRAM solutions to be as Everspin perceives them to be.

Contacts

Everspin Contact:
Story Public Relations
Michael Schoolnik, 415-674-3816
Michael@storypr.com

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